Monday, June 14, 2010

Transistor Action

Let Us Learn About Transistor Action

The term transistor action refers to the control of the large collector-emitter (linking) current by the smaller base (back injection) current in forward active operation, the origin of “current gain” in a BJT



• Two features of the device are essential for transistor action



1) A narrow base, which forces all electrons injected from the emitter

to travel across the base neutral region to the collector



2) A high emitter doping compared to the base doping, making base

(electron) injection the dominant term

Transistor action in a Si/CoSi2/Si structure is reported. The thin silicide layer (less than 100 A), which acts as the base, is a single-crystal metal, essentially continuous and locally exhibiting atomically perfect interfaces with Si. The transistor action is manifested by a common base current gain alpha as high as 0.6 and a voltage gain greater than 10.

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