Transistor Action

Let Us Learn About Transistor Action

The term transistor action refers to the control of the large collector-emitter (linking) current by the smaller base (back injection) current in forward active operation, the origin of “current gain” in a BJT

• Two features of the device are essential for transistor action

1) A narrow base, which forces all electrons injected from the emitter

to travel across the base neutral region to the collector

2) A high emitter doping compared to the base doping, making base

(electron) injection the dominant term

Transistor action in a Si/CoSi2/Si structure is reported. The thin silicide layer (less than 100 A), which acts as the base, is a single-crystal metal, essentially continuous and locally exhibiting atomically perfect interfaces with Si. The transistor action is manifested by a common base current gain alpha as high as 0.6 and a voltage gain greater than 10.