Let Us Learn About Transistor Action
The term transistor action refers to the control of the large collector-emitter (linking) current by the smaller base
• Two features of the device are essential for transistor
1) A narrow base, which forces all electrons injected from the emitter
to travel across the base neutral region to the collector
2) A high emitter doping compared to the base doping, making base
(electron) injection the dominant term
Transistor action in a Si/CoSi2/Si structure is reported. The thin silicide layer (less than 100 A), which acts as the base, is a single-crystal metal, essentially continuous and locally exhibiting atomically perfect interfaces with Si. The transistor action is manifested by a common base current gain alpha as high as 0.6 and a voltage gain greater than 10.
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